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Data Sheet
ADP2323
TYPICAL PERFORMANCE CHARACTERISTICS
Operating conditions: T A = 25°C, V IN = 12 V, V OUT = 3.3 V, L = 4.7 μH, C OUT = 2 × 47 μF, f SW = 600 kHz, unless otherwise noted.
100
95
90
85
80
75
70
100
95
90
85
80
75
70
65
V OUT = 5.0V
V OUT = 3.3V
65
V OUT = 5.0V
V OUT = 3.3V
60
55
INDUCTOR: CDRH105RNP-3R3N
MOSFET: FDS8880
V OUT = 2.5V
V OUT = 1.8V
V OUT = 1.5V
V OUT = 1.2V
60
55
INDUCTOR: CDRH105RNP-6R8N
MOSFET: FDS8880
V OUT = 2.5V
V OUT = 1.8V
V OUT = 1.5V
V OUT = 1.2V
50
0
0.5
1.0
1.5
2.0
2.5
3.0
50
0
0.5
1.0
1.5
2.0
2.5
3.0
100
90
80
70
60
50
OUTPUT CURRENT (A)
Figure 5. Efficiency at V IN = 12 V, f SW = 600 kHz, FPWM
100
90
80
70
60
50
OUTPUT CURRENT (A)
Figure 8. Efficiency at V IN = 12 V, f SW = 300 kHz, FPWM
40
30
V OUT = 3.3V, FPWM
V OUT = 3.3V, PFM
V OUT = 5V, FPWM
40
30
V OUT = 3.3V, FPWM
V OUT = 3.3V, PFM
V OUT = 5V, FPWM
20
V OUT = 5V, PFM
20
V OUT = 5V, PFM
10
INDUCTOR: CDRH105RNP-3R3N
MOSFET: FDS8880
10
INDUCTOR: CDRH105RNP-6R8N
MOSFET: FDS8880
0
0.01
0.1
1
10
0
0.01
0.1
1
10
40
OUTPUT CURRENT (A)
Figure 6. Efficiency at V IN = 12 V, f SW = 600 kHz, PFM
3.20
OUTPUT CURRENT (A)
Figure 9. Efficiency at V IN = 12 V, f SW = 300 kHz, PFM
3.15
35
3.10
30
3.05
25
3.00
2.95
20
15
10
T J = –40°C
T J = +25°C
T J = +125°C
2.90
2.85
2.80
T J = –40°C
T J = +25°C
T J = +125°C
4
6
8
10
12
14
16
18
20
4
6
8
10
12
14
16
18
20
V IN (V)
Figure 7. Shutdown Current vs. V IN
Rev. A | Page 9 of 32
V IN (V)
Figure 10. Quiescent Current vs. V IN
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